Infineon FF1000R17IE4 IGBT Module – 1700V / 1000A

Product Overview

The FF1000R17IE4 is optimized for low switching losses and excellent thermal performance. It is part of Infineon’s IGBT4 series, which features a rugged field-stop structure and a smooth switching behavior. The built-in temperature sensing NTC thermistor allows precise monitoring of the module temperature, enabling safe operation within thermal limits. The module uses the IHMIH130 package with an insulated baseplate and a high-reliability AlSiC substrate, ensuring excellent thermal cycling capability. This device is RoHS compliant and meets the highest quality standards for industrial and renewable energy applications.

Key Features

• High current density: 1000 A continuous current at low forward voltage drop.

• Trench gate field-stop IGBT4: Reduces switching losses (E_off typ. 180 mJ at 900 A).

• Inverse diode with soft recovery: Emitter-controlled 4 diode with low reverse recovery charge.

• Integrated NTC thermistor: For direct temperature monitoring.

• Low stray inductance: Module design optimised for parallel connection.

• High mechanical robustness: Pressure contact technology for mounting.

• Maximum junction temperature: T_{vj op} = 150°C (T_{vj max} = 175°C).

Technical Specifications

Thermal and Mechanical Properties

The FF1000R17IE4 features an aluminium nitride (AlN) substrate with high thermal conductivity, resulting in a low thermal resistance from junction to case (R_thJC = 0.027 K/W per IGBT). The module’s baseplate is designed for direct liquid cooling or forced air cooling, although most high-power applications use a liquid‑cooled cold plate. The housing IHMIH130 allows flexible mounting with M6 screws and supports high clamping forces. Operating temperature range is from -40°C to +150°C (junction temperature), with storage temperature from -40°C to +125°C. The module is also fully compatible with standard industrial gate drivers.

Applications

• High-power industrial motor drives (AC and DC)

• Wind energy converters (turbine side and grid side)

• Medium voltage drives and traction systems

• UPS systems and power supplies

• Solar inverters (central inverters)

• Welding equipment and induction heating

Protection and Reliability

Infineon’s IGBT4 series includes improved short-circuit robustness (10 µs withstand capability for V_CE ≤ 1200V; for 1700V devices typical short-circuit withstand time is 5‑8 µs). The integrated gate resistor and soft turn-off capability reduce overvoltage spikes. The FF1000R17IE4 is also avalanche rated (E_AS specified). With the built‑in NTC, control units can implement temperature‑dependent derating or shutdown to prevent overheating. The module passes rigorous environmental stress tests including temperature cycling, humidity, and power cycling, conforming to IEC 60747‑15.

Gate Drive Recommendations

To fully utilise the FF1000R17IE4, use a gate voltage of +15 V (on) and -8 V to -15 V (off). The gate resistance should be selected to balance switching losses and EMI. Typical values range between 0.5 Ω and 2.0 Ω per IGBT. The module has an internal gate resistor of 1.5 Ω for each IGBT. Ensure symmetrical layout of the DC link and minimise stray inductance. For parallel operation of multiple modules, the manufacturer provides application notes to ensure equal current sharing.

Quality and Environmental Compliance

Infineon Technologies certifies the FF1000R17IE4 according to ISO 9001 and IATF 16949. The module is lead‑free (RoHS compliant) and fulfils REACH regulations. It is rated for use in Pollution Degree 2 environments and meets overvoltage category III. The UL recognition (E 84210) confirms its conformance to US and Canadian safety standards. With these credentials, the FF1000R17IE4 is suitable for worldwide deployment.