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  • E2V EVX12DS130AGC 12DS130 Module
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  • E2V EVX12DS130AGC 12DS130 Module

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    Mr.FSN
    chnfcsXM@163.com
    +86-153-9626-8993
    Selection, installation, operation, maintenance, troubleshooting, safety
    Petrochemical/Chemical,Power industry,Metallurgical industry,Municipal/Environmental Protection,Oil and gas industry,Robot system accessories,automobile manufacturing,3C Electronics,Machining
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Description
<span style="font-size: 18px; font-family: arial;">E2V EVX12DS130AGC 12DS130</span>

E2V EVX12DS130AGC / 12DS130 RF Power Transistor

The E2V EVX12DS130AGC (also referenced as 12DS130) is a high-frequency, high-power bipolar RF transistor housed in a hermetic ceramic package. It is designed for pulsed and continuous wave (CW) operation in the HF to VHF frequency bands, commonly used in industrial RF heating, plasma generators, and radar transmitters.

Electrical and Frequency Characteristics

Frequency range: up to 150 MHz. Output power: 130 W (CW) or 200 W peak (pulse, duty cycle 10%). Collector-emitter voltage (VCEO): 65 V DC. Collector current (IC): 12 A max. Power gain at 100 MHz: 8 dB typical. Collector efficiency: 60% (class C). The device uses gold metallization and a silicon die with ballasted emitter resistors for thermal stability. Internal input and output matching reduces external circuit complexity.

Thermal and Mechanical Specifications

Thermal resistance (junction-to-case): 1.2 °C/W. Maximum junction temperature: 200°C. The package is a ceramic stud-type (flange diameter 20 mm) with two terminals (base and emitter) and collector connected to the flange. Flange is beryllia (BeO) ceramic for high thermal conductivity and electrical isolation. Mounting torque: 20-30 in-lbs. The device is hermetically sealed with a gold-plated lid.

Safe Operating Area and Protection

Second breakdown protected. The transistor can withstand infinite VSWR at rated power (load mismatch). Built-in anti-parallel diode for inductive load clamping. For pulsed operation, maximum pulse width 1 ms with 100 Hz repetition rate (higher duty cycles require derating). Gate voltage must be applied before collector voltage to prevent latch-up. Recommended heatsink: forced air or liquid-cooled with thermal compound.

Application Notes

Widely used in 13.56 MHz industrial RF generators for plasma etching, sputtering, and semiconductor processing. Also found in CO2 laser excitation circuits and MRI RF amplifiers. For linear amplifier (class AB) applications, quiescent current should be set to 1.5 A. Matching networks typically require transmission line transformers for broadband operation.


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