ABB IGBT MODULE KIT FS450R17OE4/AGDR-71C S TIM FOIL SP 3AXD50000948185

ABB IGBT MODULE KIT FS450R17OE4/AGDR-71C S TIM FOIL SP 3AXD50000948185

Product Overview

ABB IGBT MODULE KIT FS450R17OE4/AGDR-71C S TIM FOIL SP 3AXD50000948185 is a widely used insulated gate bipolar transistor (IGBT) module kit in the field of power electronics. It integrates advanced IGBT technology with supporting drivers and related components, aiming to provide efficient and reliable power processing solutions for various power conversion and control equipment. This kit is suitable for various industrial scenarios and can meet the needs of different devices for high-power and high-precision power control.

Model analysis

Core components

IGBT module:

Model: FS450R17OE4

Brand/Technology Platform: Infineon E4 series (new generation trench gate technology), which further optimizes losses and reliability compared to E3 series.

Key parameters:

Rated voltage: 1700 V

Rated current: 450 A (RMS)

Technical features: E4 platform supports lower saturation voltage drop (Vce (sat)) and switching losses, improving efficiency by about 5%; Enhance short-circuit withstand capability (t sc ≥ 10 ms).

Driver board:

Model: AGDR-71C

Function: Suitable for FS450R17OE4 gate driver, integrated overcurrent (DESAT), overheat (OT), undervoltage (UV) protection, supports optocoupler isolation input, compatible with TTL/CMOS signals.

Additional components:

TIM FOIL SP: may be a thermal interface material (such as conductive foil) used to optimize the thermal conductivity between modules and heat sinks, reducing thermal resistance.

Product Code: 3AXD50000948185 (ABB's globally unique material number used for supply chain tracking and order management).

Technical parameters

IGBT module (FS450R17OE4)

Voltage/current: 1700 V/450 A (RMS), pulse current 900 A (10 ms, duty cycle ≤ 1%)

Saturation pressure drop: Vce (sat)=1.9 V (typical value, @ Ic=450 A, Tj=25 ° C), reduced by about 10% compared to the E3 series

Switching frequency: up to 25 kHz (under water-cooled conditions), supports high-frequency applications to reduce the size of passive components

Thermal resistance (Rth (j-c)): 0.038 K/W (junction to shell), with TIM FOIL SP, the system's thermal resistance can be reduced to below 0.05 K/W

Drive board (AGDR-71C)

Supply voltage:+15 V/-7 V DC (isolated power supply, ripple ≤ 5%)

Signal delay: turn-on/turn off delay ≤ 100 ns, matching high-frequency switch requirements

Protection response time: overcurrent protection<1 μ s, overheating protection is monitored in real-time through onboard temperature sensors

mechanical properties

Module size: 165 mm x 70 mm x 22 mm (length x width x height), compatible with E3 series mounting holes, easy to upgrade and replace

Weight: Approximately 3.0 kg (including driver board and heat dissipation components)

Cooling method: forced water cooling (recommended flow rate ≥ 5 L/min) or high wind speed air cooling (≥ 15 m/s), supporting direct bonding of the bottom plate to the radiator

Core functions

Power conversion: It can efficiently achieve the mutual conversion between DC and AC, for example, in inverter applications, converting DC power into AC power to supply power to equipment such as motors; In rectifier applications, AC power is converted to DC power to meet the power supply requirements of different devices.

Power control: Accurately control the output power, achieve flexible control of equipment operating power through precise adjustment of IGBT conduction and turn off, and can be applied to motor speed control systems to dynamically adjust the output power of the motor according to load requirements, achieving energy-saving goals.

Circuit protection: Built in multiple protection functions, such as overcurrent protection, overvoltage protection, and overheating protection. When abnormal currents, voltages, or module temperatures occur in the circuit, timely protective measures can be taken to prevent damage to the module and other circuit components, thereby improving the safety and stability of the entire system.

Working principle

The IGBT module integrates the advantages of insulated gate field-effect transistors (MOSFETs) and bipolar transistors (BJTs) internally. During operation, when a forward voltage is applied to the gate of the IGBT, an electric field is formed that attracts electrons to gather in the channel of the MOSFET, causing the MOSFET to conduct and providing base current to the BJT. The BJT then conducts, and the IGBT is in a conducting state, allowing current to flow from the collector to the emitter. When the gate voltage decreases or is removed, the electrons in the MOSFET channel disappear, the BJT base current is cut off, the IGBT is turned off, and the current cannot pass through. By quickly switching and controlling the gate voltage, the current in the circuit can be quickly turned on and off, thereby completing power conversion and control functions. As the driving part, AGDR-71C is responsible for providing appropriate driving signals for IGBT, ensuring that IGBT can perform high-speed and stable switching actions according to the expected working mode.

Key advantages

Efficient and energy-saving: The low saturation voltage characteristic reduces power loss in the conducting state. Coupled with high switching frequency, it can effectively improve power conversion efficiency, reduce energy waste, lower equipment operating costs, and meet the requirements of today's society for energy conservation and emission reduction.