XYCOM XVME-100 memory module

(2) Environmental adaptability parameters

Specific specifications of the project, industrial scenario value

Working temperature range: 0 ° C~65 ° C (32 ° F~149 ° F), suitable for wide temperature environments such as industrial workshops and outdoor equipment cabins

Storage temperature -40 ° C~85 ° C (-40 ° F~158 ° F) to meet extreme temperature environments during storage and transportation

Humidity range of 5% to 95% RH, non condensing (requiring anti-static protection for extremely low humidity), suitable for humid environments such as high humidity workshops and coastal areas, while also indicating requirements for electrostatic protection

Vibration (working) 5~2000Hz, peak acceleration 10g, peak to peak displacement 0.025mm (maximum) to resist vibration interference during industrial equipment operation, ensuring stable module connection

Impact (working) with a peak acceleration of 30g and a duration of 11ms to withstand impacts during transportation or on-site operations, enhancing the equipment's ability to withstand harsh environments

Altitude work: 0~3048m (10000ft); Storage: 0~15240m (50000ft) suitable for special geographical environments such as high-altitude areas

Core functions and design highlights

1. Core functions of storage and configuration

(1) Dual storage group independent configuration

Configuration independence: Bank1 and Bank2 can be set completely independently through their respective jumper groups, supporting:

Different storage types (such as Bank1 caching data in RAM and Bank2 storing programs in EPROM);

Different chip capacities (e.g. Bank 1 uses 64K x 8 chips, Bank 2 uses 128K x 8 chips);

Different backup strategies (such as using battery backup for Bank1 and no backup for Bank2);

Configuration flexibility: By combining jumper wires, flexible combinations of 8 chip capacities, 4 chip speeds, 3 backup power supplies, and 2 access permissions can be achieved without the need to modify hardware or software.

(2) Multi type storage adaptation mechanism

Requirements for storage type adaptation: Key points for jumper configuration

RAM supports static RAM chips and requires low data retention current (recommended Hitachi 6264LP-15, etc.). Enable backup power (battery or+5V STDBY) and set corresponding pin definitions for jumper wires

EPROM supports 64K/128K/256K/512K/1M capacity, TTL logic level is required to disable backup power supply, and EPROM dedicated pin definition jumper is configured

Mask ROM supports 64K/128K/256K/512K capacity with EPROM configuration, no need for backup power supply

EEPROM supports 8K × 8~32K × 8 capacity and needs to support fast write/polling technology. Disable backup power and set dedicated EEPROM pins to define jumper wires

2. Data security protection mechanism

(1) Triple Data Protection Design

First layer: Under voltage protection: Built in power monitor, when the+5V voltage is lower than 4.75V, the write function of the storage chip is automatically disabled to prevent voltage fluctuations from causing data confusion; Optionally enable SYSRESET * signal to trigger system reset to protect global data;

Second layer: Backup power supply: supports on-board battery and VMEbus+5V STDBY dual backup solution, with a typical battery backup life of 6 years, suitable for independent devices without continuous power supply; +5V STDBY backup is suitable for system level backup power scenarios;

Layer 3: Physical Protection: The pin definition jumper of the storage chip can prevent hardware damage caused by accidental insertion. In case of power failure, the write path will be automatically cut off. Combined with backup power, it ensures long-term storage of RAM data.

(2) Power monitor calibration

The power monitor has been calibrated at the factory and needs to be regularly calibrated after long-term use (recommended once a year). Calibration steps:

Place the module on the expansion board, power on, and remove the J1 jumper;

Connect the negative pole of the 4.75V reference power supply to TP2 (ground) and the positive pole to the left terminal of J1;

Connect TP1 with a multimeter or oscilloscope. If the voltage is greater than 4V, rotate the POT R3 potentiometer counterclockwise until the voltage is less than 0.8V;

Slowly rotate POT R3 clockwise until the TP1 voltage jumps to a high level and stops rotating;

Remove the reference power supply and multimeter, reinstall J1, and fix the POT R3 screw with glue to prevent loosening.

3. VMEbus compatibility and interface features

(1) Bus signal compatibility

XVME-100 fully complies with the VMEbus C.1 standard, with core compatible signals including:

Address bus: A01-A23 (A24-A31 are extended addresses), supporting a 24 bit address space;

Data bus: D00-D15, supports 8-bit/16 bit data transmission;

Control signals: AS * (address gating), DS0 */DS1 * (data gating), DTACK * (data transmission confirmation), WRITE * (read-write control), etc;

Interrupt and arbitration signals: IACKIN */ACKOUT * (interrupt response daisy chain), BUS GRANT (bus grant), BUS REQ (bus request), etc.

(2) P1 connector interface definition

The P1 connector is designed with 3 rows (A/B/C) of pins, and the core pin functions are classified as follows: