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  • ABB 5SHY4045L0001 3BHB018162R0001 IGCT Module
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  • ABB 5SHY4045L0001 3BHB018162R0001 IGCT Module

    110V-380V
    5W-130W
    1A-30A
    1 year
    30
    United States, France, Japan, Viet Nam, Australia, Russia, Germany, Italy, Arabia

    The ABB 5SHY4045L0001 3BHB018162R0001 module is an integrated gate commutated thyristor (IGCT) module developed by ABB specifically for medium to high voltage and medium power power power electronics scenarios. Among them, "5SHY4045L0001" is the core material code of the product, and "3BHB018162R0001" is the series code within ABB's automation product system, belonging to the medium power branch products of ABB Power Semiconductors series. Its core function is to serve as a key switching element in the power conversion system, achieving precise control of power conversion in the medium high voltage and medium power range. It combines the dual advantages of high voltage resistance of thyristors and fast switching of transistors, and can be widely used in medium voltage frequency converters, new energy grid connected inverters (small and medium power), industrial special power supplies and other equipment, providing efficient and reliable power conversion support for industrial motor speed regulation, distributed energy access, special industrial processing and other scenarios.

    • ¥5724.00
      ¥6757.00
      ¥5724.00
      ¥5724.00
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    Weight:1.930KG
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Description

The ABB 5SHY4045L0001 3BHB018162R0001 module is an integrated gate commutated thyristor (IGCT) module developed by ABB specifically for medium to high voltage and medium power power power electronics scenarios. Among them, "5SHY4045L0001" is the core material code of the product, and "3BHB018162R0001" is the series code within ABB's automation product system, belonging to the medium power branch products of ABB Power Semiconductors series. Its core function is to serve as a key switching element in the power conversion system, achieving precise control of power conversion in the medium high voltage and medium power range. It combines the dual advantages of high voltage resistance of thyristors and fast switching of transistors, and can be widely used in medium voltage frequency converters, new energy grid connected inverters (small and medium power), industrial special power supplies and other equipment, providing efficient and reliable power conversion support for industrial motor speed regulation, distributed energy access, special industrial processing and other scenarios.




ABB 5SHY4045L0001 3BHB018162R0001 IGCT Module

Product core positioning

The ABB 5SHY4045L0001 3BHB018162R0001 module is an integrated gate commutated thyristor (IGCT) module developed by ABB specifically for medium to high voltage and medium power power power electronics scenarios. Among them, "5SHY4045L0001" is the core material code of the product, and "3BHB018162R0001" is the series code within ABB's automation product system, belonging to the medium power branch products of ABB Power Semiconductors series. Its core function is to serve as a key switching element in the power conversion system, achieving precise control of power conversion in the medium high voltage and medium power range. It combines the dual advantages of high voltage resistance of thyristors and fast switching of transistors, and can be widely used in medium voltage frequency converters, new energy grid connected inverters (small and medium power), industrial special power supplies and other equipment, providing efficient and reliable power conversion support for industrial motor speed regulation, distributed energy access, special industrial processing and other scenarios.


Key technical parameters

1. Electrical performance parameters

Rated voltage and current: Rated blocking voltage (VDRM) 4000V, suitable for common voltage levels in medium voltage power systems; The rated on state current (ITAV) is 800A (effective value), and the peak on state current (ITSM) is 6000A (10ms), which can meet the current carrying requirements of medium power systems and avoid the increase in system complexity caused by multi module parallel connection.

Switching characteristics: turn-on time ≤ 4 μ s, turn off time ≤ 6 μ s, maximum commutation frequency up to 800Hz, balancing switching speed and loss while ensuring medium power transmission efficiency. Compared with thyristors of the same power level, switching loss is reduced by more than 30%.

On state voltage drop: Under rated current, the on state voltage drop (VT) is ≤ 2.5V, designed with low conduction loss. Under continuous operation conditions, it can maintain the overall efficiency of the converter system above 97.5% and reduce energy loss.

2. Gate pole control parameters

Gate driving voltage: Turn on the gate voltage (VGE (on))+15V ± 1.5V, turn off the gate voltage (VGE (off)) -10V ± 1.5V, compatible with ABB universal IGCT gate driving units (such as 5SDF04H1000), without the need for additional customized driving circuits, reducing system integration costs.

Gate current requirement: The peak current (IG (on)) when the gate is turned on should be ≤ 60A, the peak current when the gate is turned off should be ≤ 45A, and the gate static current (IGQ) should be ≤ 8mA. The low gate power consumption design simplifies the cooling structure of the drive circuit and only requires natural air cooling to meet the cooling requirements.

3. Heat dissipation and environmental parameters

Thermal resistance characteristics: The junction to shell thermal resistance (Rth (j-c)) is ≤ 0.012K/W, suitable for conventional air-cooled radiators (such as ABB 3ADT200080R1002) or small water-cooled radiators. Under rated load, the surface temperature of the radiator can be controlled below 65 ℃ to ensure stable operation of the module.

Environmental adaptability: working temperature range (Tj) -40 ℃~125 ℃, storage temperature range -40 ℃~150 ℃, relative humidity 5%~95% (no condensation), can adapt to complex environments such as high temperature, humidity, and dust in industrial sites; The insulation level meets the IEC 60664-1 Class II standard, with an insulation voltage (Vis) of 5000V AC (1min), ensuring the electrical safety of the module under medium voltage conditions.

4. Physical and packaging parameters

Packaging form: Adopting ABB compact press pack packaging, the shell is a ceramic metal composite structure, which has good insulation and mechanical strength. The size is about 150mm × 100mm × 45mm, which is 20% smaller than high-power IGCT modules and suitable for installation in small and medium-sized power electronic cabinets.

Pin configuration: It includes 2 main electrodes (anode A, cathode K) and 1 gate electrode (G). The main electrode adopts M10 threaded crimping terminal, and the gate electrode adopts standardized quick connector. No welding is required during installation, only bolt fastening is needed. The contact resistance is ≤ 50 μ Ω, reducing current transmission loss.


Core functions and features

Adaptability to Medium Power Scenarios: Optimized for medium voltage and medium power (such as 1MW~5MW) application scenarios, the rated parameters of 4000V/800A can accurately match the requirements of small and medium power converter systems, without the need for "big horses pulling small cars" to select high-power modules and reduce equipment procurement costs; The 800Hz commutation frequency can balance the filtering requirements of the system, and the volume of the filtering element is reduced by 15% compared to the 500Hz frequency scenario, further compressing the overall size of the equipment.

High reliability and fault tolerance: The crimping packaging structure ensures close contact between the internal chips and electrodes of the module, and the seismic resistance level reaches the 50g acceleration level of IEC 60068-2-6 standard, which can adapt to industrial scenarios with severe vibrations such as mining and rail transit; The gate drive unit integrates four protection functions: overvoltage, overcurrent, overheating, and gate open circuit. When the module experiences overvoltage (exceeding VDRM 110%), overcurrent (exceeding ITSM), high junction temperature (exceeding 125 ℃), or gate open circuit faults, the gate drive signal can be cut off within 2 μ s, forcing the module to shut down and preventing the fault from expanding; At the same time, the module has a fault self diagnosis function, which can upload fault information to the control system through the driving unit, making it easy for operation and maintenance personnel to quickly locate problems.

Low operation and maintenance costs and high compatibility: The crimping packaging design allows for module installation and replacement without the need for professional welding equipment. A single person can complete module replacement within 30 minutes, significantly reducing equipment downtime for maintenance; The module is compatible with mainstream control systems such as ABB ACS 580MV series medium voltage frequency converters and PCS 100 MV series energy storage converters. It can directly replace old IGCT modules of the same power level (such as 5SHY3545L0001) without modifying the system control program and hardware wiring, reducing equipment upgrade costs.

Environmental Protection and Long Life Design: Adopting lead-free packaging technology and RoHS compliant materials to reduce environmental pollution; The internal chips of the module adopt a parallel structure of multiple unit cells, with uniform current distribution to avoid life decay caused by local overheating. The mean time between failures (MTBF) is ≥ 80000 hours, and the service life can reach more than 12 years. It is suitable for long-term continuous operation scenarios such as distributed photovoltaic power plants and small and medium-sized wind farms.

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