ABB 5SHY4045L0004 3BHB021400R0002 3BHE039203R0101 GVC736CE101 thyristor IGCT

ABB 5SHY4045L0004 3BHB021400R0002 3BHE039203R0101 GVC736CE101 thyristor IGCT

Core positioning

This type of device is a high-power semiconductor switch device developed by ABB for the medium and high voltage industrial field. Its core function is to achieve high-power on-off control and energy regulation in the process of electrical energy conversion. It is the "power heart" of equipment such as medium and high voltage frequency converters, SVG static reactive power generators, metallurgical arc furnace power supply devices, rail transportation traction converters, and pumped storage unit converters. By precisely controlling the gate signal, it can achieve precise regulation of kiloampere level current and kilovolt level voltage, ensuring efficient and stable operation of power electronic systems.

Core technical characteristics (similarities and differences between thyristors and IGCT)

1. Common technological advantages

(1) Ultra high power density and withstand voltage and current capability

Based on ABB's advanced semiconductor manufacturing processes, such as thin film epitaxy technology and precision doping technology, these devices generally cover a rated voltage range of 3kV-15kV and a rated current of 1kA-6kA. A single device can meet the power requirements of medium and high voltage systems without the need for a large number of devices to be connected in parallel, greatly simplifying the system topology and improving power density. At the same time, the device has excellent surge current tolerance, which can cope with load shocks in industrial sites and reduce the risk of faults.

(2) Excellent thermal stability and reliability

Adopting ceramic insulation packaging and efficient heat dissipation structure, the device has a wide temperature adaptability range (usually -40 ℃ to 125 ℃) and can operate stably in high-temperature and high dust environments such as metallurgy and chemical industry. The packaging process has good airtightness and corrosion resistance, which can effectively isolate industrial pollutants and extend the service life of devices (the design life generally exceeds 100000 hours). In addition, the device has built-in over temperature and over-current detection nodes, which can be used in conjunction with the driver board to achieve rapid protection.

(3) Mature gate pole control characteristics

Both thyristor triggering control and IGCT commutation control have good controllability. After being equipped with driver boards such as GVC736CE101, precise timing control of gate signals can be achieved, with short triggering delay time (microsecond level) and high control accuracy, ensuring that the device can smoothly turn on and off under complex working conditions (such as grid voltage fluctuations and load changes), avoiding voltage and current surges.

2. Core differences between thyristors and IGCT

Characteristic dimension

Thyristor

Integrated gate commutated thyristor (IGCT)

Switch characteristics

Half controlled device, after conduction, needs to be turned off by anode current zero crossing or reverse voltage, with a slow turn off speed (millisecond level)

Fully controlled device, can actively turn off through gate negative current, with fast turn off speed (microsecond level) and better dynamic characteristics

Control flexibility

Suitable for unidirectional or low-frequency switching scenarios such as rectification and voltage regulation, with relatively simple control logic

Suitable for high-frequency inverters and bidirectional energy conversion scenarios (such as energy storage PCS), with higher control accuracy

Typical model

3BHB021400R0002 (some models)

5SHY4045L0004, 3BHE039203R0101 (some models)

Efficiency and Loss

The conduction loss is low, but the switching loss is high, and the efficiency decreases significantly under high-frequency conditions

Balancing conduction loss and switching loss, significant efficiency advantage under high-frequency operating conditions

Typical application scenarios

-Metallurgical industry: used as a power rectifier device for electric arc furnaces and continuous casting machines, achieving precise power control during the smelting process through the voltage regulation characteristics of thyristors, ensuring the quality of metal melting and production efficiency; IGCT is used as a variable frequency device in the transmission system of rolling mills to achieve high-precision speed regulation of motors.

-Power system: In SVG static reactive power generator and SVC static reactive power compensation device, the device serves as the core switching unit to quickly adjust the output reactive power, compensate for grid harmonics, and improve grid power factor and power quality; In pumped storage power stations, the four quadrant converter used for the unit achieves efficient switching between power generation and pumping modes.

-Rail transit: traction converters suitable for high-speed trains and subways, with thyristors used for grid side rectification to convert AC power into DC power; IGCT is used on the inverter side to convert direct current into variable frequency alternating current required by the motor, achieving smooth acceleration and braking energy recovery of the train.

-Industrial transmission and new energy: In medium and high voltage frequency converters, IGCT serves as the core component of the inverter bridge, driving high-power equipment such as fans, pumps, and compressors to achieve energy-saving speed regulation; In photovoltaic power plant boost inverters and energy storage systems PCS, it is used for energy conversion on the medium and high voltage sides to enhance the stability of the system's grid connection.

-Ship and Ocean Engineering: Inverters used for ship electric propulsion systems, thyristors for rectifying the output electrical energy of diesel generators, IGCT for inverter driven propulsion motors, ensuring stable power output of ships in complex sea conditions.

Core considerations for selection and use

1. Key parameters for selection

The selection should be based on the core requirements of the system, with a focus on matching the following parameters:

-Voltage parameters: Based on the rated voltage and overvoltage level of the system, the rated blocking voltage (VDRM) of the device is selected, usually requiring 1.2-1.5 times the voltage redundancy (for example, if the system voltage is 6kV, devices with blocking voltage above 8kV can be selected).

-Current parameters: Select the rated on state current (ITAV) of the device based on the rated current of the system and the magnitude of the surge current. The surge current should meet the short-term withstand requirements during system startup or failure (usually 5-10 times the rated current).

-Switching characteristics: Thyristors are preferred for low-frequency rectification and voltage regulation scenarios; IGCT is preferred for high-frequency inverters and bidirectional energy conversion scenarios, while paying attention to the matching of device switching time, trigger current and other parameters with the driving board.

-Heat dissipation requirements: Based on the power loss of the device (conduction loss+switch loss), match the corresponding heat dissipation scheme (such as forced air cooling, water cooling) to ensure that the device junction temperature is controlled within a safe range.

2. Usage and operation standards

-Device installation: Strictly follow the device packaging requirements for mechanical installation, ensuring that the heat dissipation surface is tightly adhered (contact thermal resistance ≤ 0.01K/W), and the installation torque meets the manual requirements to avoid excessive tightening that may cause ceramic packaging to break; When multiple devices are connected in parallel, it is necessary to ensure current sharing characteristics and symmetrical installation positions.

-Drive matching: ABB matching drive boards (such as GVC736CE101) or third-party drive products certified by ABB must be used. The amplitude, width, and timing of the drive signal must match the device parameters. It is prohibited to use drive signals that do not meet the requirements to avoid misleading on or off failure of the device.

-Electrical connection: Low impedance copper bars should be used for the main circuit wiring, and the wiring terminals should be securely fastened to avoid contact heating caused by high currents; The control circuit and the main circuit need to be wired separately, and the control cables should use shielded wires to prevent electromagnetic interference from disrupting the gate signal.

-Debugging and Testing: Device characteristic tests (such as blocking voltage tests and gate trigger tests) need to be conducted before the first operation. During system debugging, a no-load test should be conducted first, gradually loaded to the rated load, and real-time monitoring of device junction temperature, voltage and current waveforms should be carried out to ensure no abnormalities.

-Maintenance and replacement: Regularly clean the cooling system during daily maintenance (such as cleaning the dust on the cooling fins and checking the quality of the coolant), and track the operating parameters of the components through an online monitoring system; When replacing components, it is necessary to ensure that the model is consistent, and aging tests must be conducted before the new components are put into operation to avoid batch quality issues.